The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Dec. 23, 1999
Narihiro Morosawa, Nara, JP;
Hiroshi Iwata, Nara-ken, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An insulated gate transistor in which nitride oxide film having a nitrogen concentration of 1×10 (/cm ) or more and containing a halogen element is used as a gate insulator. Because the gate insulator has a nitrogen concentration of 1×10 (/cm ) or more, boron contained in the gate electrode of the p-type transistor is never diffused into the channel. Further because a halogen element is contained in the gate insulator, transistor conductance is increased and reliability in hot carrier injection is improved. Thus, an insulated gate transistor which has a sufficiently large conductance and which is superior in reliability can be fabricated.