The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Oct. 17, 2000
Steven L. Merchant, Milford, NH (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An improved DMOS power transistor ( ) with a single p-body implant ( ) and including an n-type channel compensating implant (NCCI) ( ). The improved DMOS power transistor ( ) provides a more favorable trade-off between threshold voltage (V ) and on-state resistance, while increasing the safe operating area (SOA). The NCCI ( ) also improves the off-state breakdown voltage, and allows a larger fraction of the gate bias voltage to be supported on the thin gate oxide ( ). The present invention can be fabricated using self-aligned fabrication techniques so that the channel length ( ) is insensitive to lithography equipment.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile