The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Jun. 25, 2002
Atsushi Yasuno, Nara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention provides a photovoltaic device comprising an electricity generating layer including at least one p/n type junction, the layer comprising a silicon-based non-single-crystalline semiconductor material, wherein a nitrogen concentration has a maximum peak at the junction interface of the p/n type junction, and the nitrogen concentration at the maximum peak is within a range from 1×10 atom/cm to 1×10 atom/cm , thereby providing a photovoltaic device of high photoelectric conversion efficiency and high reliability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile