The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Aug. 06, 2002
Applicant:
Inventor:
Lance S. Robertson, Rockwall, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method of forming a semiconductor device includes forming at least one amorphous region within an at least partially formed semiconductor device. The method also includes implanting a halogen species in the amorphous region of the at least partially formed semiconductor device. The method further includes doping at least a portion of the at least one amorphous region to form at least one junction within the at least partially formed semiconductor device. The method also includes performing solid phase epitaxial re-growth to activate the doped portion of the at least one amorphous region of the at least partially formed semiconductor device.