The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Jul. 09, 2002
Ki-Young Oh, Chungcheongbuk-do, KR;
Hynix Semiconductor Inc., Kyoungki-Do, KR;
Abstract
A method of fabricating a capacitor in semiconductor devices includes forming an insulating interlayer on a semiconductor substrate; forming a contact hole in the insulating interlayer to expose a portion of the semiconductor substrate; forming a plug in the contact hole to be in contact with the semiconductor substrate; forming an adhesive layer, a first barrier layer and a first lower electrode on the insulating interlayer successively; selectively removing portions of the adhesive layer, the first barrier layer and the first lower electrode to define exposed sides of the adhesive layer, the first barrier layer and the first lower electrode; forming a second barrier layer at sides of the adhesive layer; forming a second lower electrode at the sides of the first and second barrier layers; forming a dielectric layer on the first lower electrode and second lower electrode; and forming an upper electrode on the dielectric layer.