The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Sep. 02, 1998
Applicant:
Inventor:
Thomas S. Rupp, Stormville, NY (US);
Assignee:
Infineon Technologies North America Corp., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/1336 ; H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/1336 ; H01L 2/7108 ; H01L 2/976 ; H01L 2/994 ;
Abstract
A semiconductor device includes a substrate forming a trench, the trench including a storage node disposed within the trench. A wordline is disposed within the substrate and adjacent to a portion of the substrate. A vertically disposed transistor is included wherein the wordline functions as a gate, the storage node and a bitline function as one of a source and a drain such that when activated by the wordline the transistor conducts between the storage node and the bitline. The invention further includes a method of fabricating the semiconductor device with vertical transistors.