The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2004
Filed:
Feb. 15, 2002
Isao Kimura, Kanagawa, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device including a P-type semiconductor layer; an N-type first well on the surface of the semiconductor layer; a P-type second well on the surface of the first well; an N-type source region on the surface of the second well; and an N-type drain region on the surface of the first well and apart from the source region at a specific distance. A gate electrode is formed on the semiconductor layer and extends from the source region to the second well and the first well. An application electrode is arranged apart from the gate electrode on the first well between the second well and the drain region, and extends from the first well to the edge thereof. A P-type first impurity diffusion layer is formed on the surface of the source region and extends to the second well under the source region.