The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2004

Filed:

Oct. 14, 1999
Applicant:
Inventors:

Shuichiro Ogawa, Fuji, JP;

Keigo Takeguchi, Fuji, JP;

Atsushi Fujii, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 7/24 ;
U.S. Cl.
CPC ...
G11B 7/24 ;
Abstract

An optical information recording medium which can eliminate the necessity for the initialization process. A crystallization assisting layer ( ) comprising a given material is formed over a substrate ( ) on one side thereof, and a recording layer ( ) comprising a Ge—Sb—Te alloy is formed directly on the layer ( ). Since the recording layer ( ) crystallizes immediately after film formation, no initialization process is necessary for the optical information recording medium obtained. Examples of the material of the crystallization assisting layer firstly include materials having a face-centered cubic lattice system crystal structure. Examples thereof secondly include tellurium-free materials having a rhombohedral lattice system crystal structure. An especially preferred crystallization assisting layer is a discontinuous island-like film made of a material comprising bismuth and/or a bismuth compound. Incorporation nitrogen into the crystallization assisting layer provides an optical information recording medium which need not be initialized and has excellent overwrite cyclability.


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