The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2004

Filed:

Jul. 12, 2001
Applicant:
Inventors:

James Garcia, Austin, TX (US);

Michael McBride, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 3/348 ; G01N 2/700 ; G01N 2/100 ; G01N 3/700 ; H01L 2/166 ;
U.S. Cl.
CPC ...
G01N 3/348 ; G01N 2/700 ; G01N 2/100 ; G01N 3/700 ; H01L 2/166 ;
Abstract

Methods and apparatus are provided for measuring contaminant mobile ions in a dielectric portion of a semiconductor. The apparatus is comprised of a heat source configured to elevate a temperature of the dielectric portion of the semiconductor and mobilize the contaminant mobile ions. The apparatus is also comprised of a fluid source configured to expose the dielectric portion of the semiconductor to a mobilizing fluid having contaminant ion releasing atoms that assists in mobilizing the contaminant mobile ions. The apparatus further comprises a mobile ion measurement unit configured to perform measurements of the contaminant mobile ions in the dielectric portion of the semiconductor.


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