The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Nov. 07, 2001
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/227 ;
U.S. Cl.
CPC ...
H01S 5/227 ;
Abstract
A semiconductor device and a photonic semiconductor device are disclosed wherein, if w is the thickness of a metal electrode layer covering a contact layer and current-unfed regions, D denotes the thickness of a plating layer on the metal electrode layer, the boundary between the contact layer and any one of the current-unfed regions is an origin, a direction from the origin into the device interior is a positive direction, and a direction from the origin toward any one of device facets is a negative direction, then a distance d between the origin and each facet of the plating layer satisfies (d/w)[1−w/(w+D)]<20.