The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Feb. 27, 2002
Applicant:
Inventor:
Hironobu Fukui, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7092 ;
U.S. Cl.
CPC ...
H01L 2/7092 ;
Abstract
A semiconductor device according to one aspect of the present invention, is a semiconductor device comprising: a first MOS field effect transistor of an n-type including a first oxynitride film as a first gate insulator film; and a second MOS field effect transistor of a p-type including a second oxynitride film as a second gate insulator film, the second MOS field effect transistor being disposed adjacent to the first MOS field effect transistor; wherein a concentration of nitrogen in the first gate insulator film is different form that in the second gate insulator film.