The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Jul. 11, 2002
Applicant:
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/994 ; H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 2/994 ; H01L 3/1062 ;
Abstract
A plurality of MOS type FET devices and are provided on a semiconductor substrate A lower interlayer insulating film is provided thereon. Each of through holes which extends from each of gate electrodes of the plural FET devices via source/drain regions and , is defined in the lower interlayer insulating film A local wiring is buried in the through hole to connect each gate electrode and the source/drain regions and . Further, an upper interlayer insulating film is provided on the local wiring and the lower interlayer insulating film Upper electrode layers are placed on the surface of the upper interlayer insulating film