The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2004

Filed:

Apr. 18, 2002
Applicant:
Inventor:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ; H01L 2/978 ; H01L 2/976 ; H01L 2/1336 ; G11C 1/604 ;
U.S. Cl.
CPC ...
H01L 2/9788 ; H01L 2/978 ; H01L 2/976 ; H01L 2/1336 ; G11C 1/604 ;
Abstract

A semiconductor device comprising a non-volatile memory cell ( ) for storing a bit, arranged in a semiconductor substrate ( ) containing a first dopant type, the memory cell including a drain ( ) in the substrate ( ), a floating gate ( ), a control gate ( ), a thin gate isolation layer ( ), and an insulating layer ( ), the insulating layer ( ) being above the floating gate ( ), the control gate ( ) being above the insulating layer ( ), the floating gate ( ) being above the thin gate isolation layer ( ), and the cell further including an access transistor ( ) for controlling access to the non-volatile memory cell ( ), the cell ( ) including a buried substrate layer ( ) containing a second dopant type and a source ( ), and the access transistor ( ) being formed in the substrate ( ), in a trench adjacent to the floating gate ( ), said trench extending substantially from the source ( ) to the substrate's surface.


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