The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Jul. 28, 1998
Applicant:
Inventors:
Joël Hartmann, Claix, FR;
Marc Belleville, St. Egrève, FR;
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
The invention relates to an electrically erasable, non-volatile memory device, having a memory cell of the floating gate type ( ), defined by a source zone, a drain zone, a channel zone ( ) and a control gate zone ( ), the latter being separated from the channel zone by an insulation zone ( ), said five zones being implemented in a semiconductor film formed on an insulating layer ( ), said memory cell being laterally insulated by one or more insulation zones ( ) in contact with the insulating layer.