The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Nov. 08, 2000
Hyoung-Sub Kim, Kyunggi-do, KR;
Abstract
A storage node of a DRAM cell capacitor includes a first insulating layer in which a bit line pattern is formed, a second insulating layer formed on the first insulating layer of which material is different from that of the second insulating layer, a first conductive layer formed on the second insulating layer that has an etching rate different from that of the first conductive layer, a material layer formed on the first conductive layer, which has a smaller width than the first conductive layer and is made of material with different etching characteristics from that of the first conductive layer, a second conductive layer that is formed on the material layer and has the same width as that of the material layer, and a sidewall conductive spacer that is an contact with the second conductive layer and the material layer and is formed on the top surface of the first conductive layer and on sides of the material layer and the second conductive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile