The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Nov. 18, 2002
Applicant:
Inventors:
Ming Cheng Chang, Taoyuan Hsien, TW;
Jeng-Ping Lin, Taoyuan Hsien, TW;
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract
A memory cell with a vertical transistor and a trench capacitor. The memory cell includes a substrate having a trench and a trench capacitor disposed in the lower trench. A control gate, with a p-type polysilicon germanium layer and an overlying p-type polysilicon layer, is disposed in the upper trench and insulated from the substrate. A first insulating layer is disposed between the trench capacitor and the control gate. A first doped region is formed in the substrate around the first insulating layer and a second doped region is formed in the substrate around the second conductive layer.