The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Feb. 27, 2001
Nicolas J. Moll, Woodside, CA (US);
Yu-Min Houng, Cupertino, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
A heterojunction bipolar transistor (HBT) having a base-emitter junction that exhibits the desirable properties of a GaAsSb/AlInAs interface, but which includes an intermediate layer in the emitter such that the intermediate layer contacts the GaAsSb base and the AlInAs emitter. The intermediate layer is sufficiently thin to be substantially electrically transparent, but sufficiently thick to provide a surface over which to grow the AlInAs emitter. The intermediate layer may be of a material such as InP, which has a bulk lattice constant that matches the lattice constant of the GaAsSb base and the AlInAs emitter. Alternatively, the intermediate layer may be of a material having a lattice constant different than that of the GaAsSb base and the AlInAs emitter, but may be pseudomorphically grown so as to provide an apparent lattice-match to the GaAsSb base and the AlInAs emitter.