The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Apr. 25, 2002
Applicant:
Inventor:
Chao-Yuan Huang, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of forming a salicide. A metal layer is formed on a silicon-based substrate comprising a gate with a spacer on the side wall of the gate and a source/drain is provided. Next, a first thermal treatment is performed to make the portions of the metal layer react with the silicon in the gate and the source/drain to form a salicide. Then, any unreacted metal and the spacer are removed. An ion containing silicon is introduced into the source/drain. Finally, a second thermal treatment is performed.