The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Nov. 12, 2002
Kee-Joon Oh, Ichon-shi, KR;
Geun-Min Choi, Ichon-shi, KR;
Hynix Semiconductor Inc., Ichon-shi, KR;
Abstract
Provided is a method for fabricating a capacitor of a semiconductor; and, more particularly, to a method for forming a Ru storage node of a capacitor that can form a stable storage node. The method includes the steps of: a method for forming a ruthenium (Ru) storage node of a semiconductor device, comprising the steps of: etching an insulation layer on a substrate and forming openings; depositing a Ru layer along the profile of the insulation layer and the openings; filling a photoresist in the openings; performing an etching process until the insulation layer between neighboring openings is exposed and forming isolated Ru storage nodes with the Ru layer in the openings; and removing photoresist and polymers with a solution including H SO and H O .