The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Jul. 31, 2002
Applicant:
Inventors:
Dietrich Bonart, München, DE;
Peter Voigt, Hallbergmoos, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
For particularly simple and targeted formations of a diffusion region, an interfacial region of a semiconductor substrate is subjected to a thermal transformation process and thereby carry out the thermally activated diffusion of a dopant in a substantially directed form, in particular in substantially a preferential direction, by interaction of a provided dopant with a transforming interfacial region.