The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
Sep. 11, 2001
Applicant:
Inventors:
Wen-Yen Hwang, Sugar Land, TX (US);
Klaus Alexander Anselm, Sugar Land, TX (US);
Jun Zheng, Houston, TX (US);
James N. Baillargeon, Springfield, NJ (US);
Assignee:
Applied Optoelectronics, Inc., Sugar Land, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method is provided, the method comprising forming a first of n masking layers for a device and forming a first of n phase-shift layers for the device using the first of the n masking layers. The method also comprises forming a second of n masking layers for a device, and forming a second of n phase-shift layers for the device using the second of the n masking layers and forming at least n+1 and at most 2 different optical thicknesses for the device using the n masking layers and the n phase-shift layers.