The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2004
Filed:
May. 08, 2002
Kwang Jo Hwang, Kyonggi-do, KR;
Binn Kim, Seoul, KR;
Hae Yeol Kim, Kyonggi-do, KR;
Jong Uk Bae, Seoul, KR;
LG.Philips LCD Co., Ltd., Seoul, KR;
Abstract
A method of forming polycrystalline silicon for a liquid crystal display device is disclosed in the present invention. The method includes forming an amorphous silicon layer on a substrate, forming a plurality of catalytic metal clusters on the amorphous silicon layer, forming a catalytic metal gettering layer adjacent to the amorphous silicon layer, and heat-treating the substrate including the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer, wherein unreacted catalytic metal clusters migrate to the catalytic metal gettering layer in a direction perpendicular to the substrate.