The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Apr. 23, 2002
Vladimir I. Prodanov, New Providence, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
An up to 3× breakdown voltage tristate capable integrated circuit CMOS buffer includes a level shifter circuit and a driver circuit. The driver stage includes a series connected n-channel and p-channel cascode stacks, each including at least three transistors. Dynamic gate biasing is provided for the third n-channel and p-channel cascode transistors to prevent voltage overstress of the cascode transistors. The level shifter circuit includes at least one pseudo N-MOS inverter including an input transistor, a protective cascode stack including at least one n-channel cascode transistor, and a load transistor. The level shifter provides at least one voltage shifted input signal to the driver.