The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
May. 27, 2003
Nicole R. Grove, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A semiconductor structure ( ) has one or more air gaps ( ) formed on a same layer with an interlevel dielectric (ILD) ( ) using a common dielectric material ( ) that is photosensitive. Additional ILDs ( ) may be formed on the layer. The photosensitive material is exposed in a manner such that a portion of the material is modified by light to change the cross-linking characteristics such that uncross-linked portions are outgassed upon heating. Air gaps form from the outgassing of the unlinked portions. ILD side-pillars ( ) to the air gaps which are formed by mask sizing or lithographic alignment provide additional structural support for the air gaps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile