The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Aug. 02, 2001
Applicant:
Inventor:
Narakazu Shimomura, Gojyo, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/362 ;
U.S. Cl.
CPC ...
H01L 2/362 ;
Abstract
A semiconductor device comprising an electrostatic protective element of the semiconductor device including a first conductivity type substrate and a second conductivity type high concentration diffusion layer formed on a surface of the substrate, and a semiconductor element including a source/drain and a gate electrode, wherein a first conductivity type diffusion layer having a higher concentration than the first conductivity type substrate is provided in an entire region under the second conductivity type high concentration diffusion layer.