The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Feb. 12, 2002
Applicant:
Inventors:
Dirk Priefert, Moers, DE;
Ralf Rudolf, Duisburg, DE;
Viktor Boguszewicz, Essen, DE;
Frank Michalzik, Hamminkeln/Mehroog, DE;
Rolf Buckhorst, Mülheim a.d. Ruhr, DE;
Assignee:
EUPEC Europaische Gesellschaft fur Leistungshalbleiter mbH, Warstein, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
Abstract
A lateral semiconductor element ( ) in thin-film SOI technology comprises an insulator layer ( ) which rests on a substrate ( ) and is buried under a thin silicon film ( ), on top of which the source, or anode, contact ( ) and the drain, or cathode, contact ( ) are mounted. The anode contact ( ) and the cathode contact ( ) each lie over separate shield regions ( ) within substrate ( ), with the anode contact ( ) being electrically connected with substrate ( ).