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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6693327 B1

PDFFull Text
Date of Patent:
Feb. 17, 2004

Filed:

Feb. 12, 2002

Lateral semiconductor component in thin-film soi technology

Applicant:
Inventors:

Dirk Priefert, Moers, DE;

Ralf Rudolf, Duisburg, DE;

Viktor Boguszewicz, Essen, DE;

Frank Michalzik, Hamminkeln/Mehroog, DE;

Rolf Buckhorst, Mülheim a.d. Ruhr, DE;

Assignee:

EUPEC Europaische Gesellschaft fur Leistungshalbleiter mbH, Warstein, DE;

Attorney:

Richard M. Goldberg

Primary Examiner:

Thien Tran

Int. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
U.S. Cl.
CPC ...
H01L 2/701 ; H01L 2/712 ; H01L 3/10392 ;
Abstract

A lateral semiconductor element ( ) in thin-film SOI technology comprises an insulator layer ( ) which rests on a substrate ( ) and is buried under a thin silicon film ( ), on top of which the source, or anode, contact ( ) and the drain, or cathode, contact ( ) are mounted. The anode contact ( ) and the cathode contact ( ) each lie over separate shield regions ( ) within substrate ( ), with the anode contact ( ) being electrically connected with substrate ( ).

Find Patent Forward Citations

Priefert, Dirk. (2004). Lateral semiconductor component in thin-film soi technology (U.S. Patent No. 6693327). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6693327

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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