The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Jun. 11, 2002
Applicant:
Inventors:
Hiroyuki Ota, Tsurugashima, JP;
Masayuki Sonobe, Kyoto, JP;
Norikazu Ito, Kyoto, JP;
Tetsuo Fujii, Kyoto, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/713 ;
U.S. Cl.
CPC ...
H01L 2/713 ;
Abstract
A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap than that of the active layer. The device also includes a barrier portion formed of the predetermined material for surrounding a threading dislocation in the active layer. The barrier portion has a vertex. The device also includes a semiconductor layer having an impurity concentration ranging from 1E16/cc to 1E17/cc in which the vertex is placed.