The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Feb. 04, 2002
Tsung-Ping Hsu, Tao-Yuan Hsien, TW;
In-Yao Lee, Taipei Hsien, TW;
Hung-Sheng Hu, Kao-Hsiung, TW;
Chung-Cheng Chou, Taipei, TW;
Wei-Lin Chen, Taipei, TW;
BenQ Corporation, Tao-Yuan Hsien, TW;
Abstract
A gradational etching method for high density wafer production. The gradational etching method acts on a substrate having a first passivation layer and a second passivation layer on a top surface and a bottom surface, respectively, of the substrate. A first etching process is performed to simultaneously etch the substrate and the first passivation layer to remove the first passivation layer. Finally, a second etching process is performed to etch the substrate to a designated depth that is used to control the thickness of the wafer after the second etching process.