Power mos element and method for producing the same

Abstract

A power MOS element includes a drift region with a doping of a first doping type, a channel region with a doping of a second doping type which is complementary to said first doping type and which borders on said channel region and said drift region, and a source region with a doping of said first doping type, said source region bordering on said channel region. Furthermore, said power MOS element includes a plurality of basically parallel gate trenches which extend to said drift region and which comprise an electrically conductive material which is insulated from the transistor region by an insulator. The individual gate trenches are connected by a connecting gate trench, a gate contact only being connected in an electrically conductive way to the active gate trenches via contact holes in said connecting gate trench. For producing, three photolithographic steps are sufficient, which serve to etch said gate trenches and said connecting gate trench, to produce said contact holes for said source region and said channel region as well as for said connecting gate trench, and to finally structure said gate contacts and said source contact. Thus, a flexible layout concept is possible in which said gate contact can also be placed in the middle of or at another location on said power MOS element without additional expenditure. Optionally, without additional process steps, margin terminating structures can be produced parallel to the formation of said active transistor region in the form of circumferential floating rings or of floating field plates.