The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2004

Filed:

Jun. 26, 2002
Applicant:
Inventors:

John D. Davis, Manassas, VA (US);

Thomas J. McIntyre, Nokesville, VA (US);

John C. Rodgers, Fairfax, VA (US);

Keith K. Sturcken, Nokesville, VA (US);

Peter W. Spreen, Fairfax, VA (US);

Tushar K. Shah, Columbia, MD (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/182 ; H01L 2/18238 ; H01L 2/904 ;
U.S. Cl.
CPC ...
H01L 2/182 ; H01L 2/18238 ; H01L 2/904 ;
Abstract

A method for manufacturing a programmable chalcogenide fuse within a semiconductor device is disclosed. A resistor is initially formed on a substrate. Then, a chalcogenide fuse is formed on top of the resistor. Finally, a conductive layer is deposited on top of the chalcogenide fuse for providing electrical conduction to the chalcogenide fuse.


Find Patent Forward Citations

Davis, John. (2004). Method for manufacturing a programmable chalcogenide fuse within a semiconductor device (U.S. Patent No. 6692994). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6692994

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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