The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Jan. 31, 2003
Tsuyoshi Takahashi, Ora-gun, JP;
Toshiyuki Okoda, Ora-gun, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present invention eliminates difficulty in performance improvement of the two elements. In an illustrative optical semiconductor integrated circuit device, a vertical pnp transistor and a photodiode have been formed, and first and second epitaxial layers and are stacked without doping. This enables a depletion layer forming region to be remarkably increased in the photodiode, and high-speed response becomes possible. Additionally, in the vertical pnp transistor, an n+ type diffusion region surrounds the transistor forming region. This can remarkably improve voltage endurance of the vertical pnp transistor