The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Sep. 24, 2001
Applicant:
Inventors:
Hidetaka Takato, Tsukuba, JP;
Ryuichi Shimokawa, Ushiku, JP;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/130 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/130 ;
Abstract
A method of manufacturing a solar cell comprises interposing an intermediate layer containing p-type or n-type impurity between a silicon thin film and a support substrate, and heating all or part of the structure thus formed to a temperature at which the impurity contained in the intermediate layer diffuses into the silicon thin film, forming a high-concentration impurity layer in the silicon thin film.