The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
May. 29, 2002
Mitsunobu Gotoda, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A wavelength-tunable semiconductor laser includes a semiconductor substrate; an optical waveguide on an upper surface of the semiconductor substrate; a front light reflection area including an SG-DBR mirror with repeating pairs of a diffraction grating portion and a non-diffraction grating portion over plural periods; a rear light reflection area including an SSG-DBR mirror achieved with repeating portions in which the pitch of a diffraction grating pitch regularly varies from one end to the other end; an active region including an active layer between the front light reflection area and the rear light reflection area; and a phase control area between the front light reflection area and the rear light reflection area and including a phase control layer with a refractive index varied by current injection.