The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Mar. 09, 2001
Applicant:
Inventor:
Naoyuki Miyazawa, Nakakoma, JP;
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03G 3/10 ;
U.S. Cl.
CPC ...
H03G 3/10 ;
Abstract
The high frequency power amplifier comprises a detector which detects a collector output power (or base input power) of an amplifying transistor, and a DC/DC converter which changes a collector voltage of the amplifying transistor in proportion to the detected power. Thus, a DC power consumed by the amplifying transistor is controlled. A resistor for a base bias of the amplifying transistor is connected to the DC/DC converter, thereby interlocking the base bias control with the control of the DC/DC converter.