The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Sep. 03, 2002
Applicant:
Inventors:
Bart Dierickx, Mortsel, BE;
Jan Bogaerts, Sint-Katelijne-Waver, BE;
Assignee:
FillFactory, Mechelen, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9772 ;
U.S. Cl.
CPC ...
H01L 2/9772 ;
Abstract
A semiconductor device structure is described for reducing radiation induced current flow caused by incident ionizing radiation. The structure comprises a semiconductor substrate; two or more regions of a first conductivity type in the substrate; and a guard ring of a second conductivity type for obstructing radiation induced parasitic current flow between the two or more regions of the first conductivity type. The structure may be used in a pixel, e.g. in a diode or a transistor, for increasing radiation resistance.