The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Sep. 30, 2000
Applicant:
Inventor:
Heinz-Peter Frerichs, St. Peter, DE;
Assignee:
Micronas GmbH, Freiburg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
An EPROM structure for a nonvolatile semiconductor memory includes a plurality of memory cells that each include a floating gate transistor ( ) that can be programmed by hot electrons and erased by UV light. An additional, common gate capacitance ( ) is associated with each memory cell to raise the potential at the floating gate transistor ( ) to the level required for writing by applying to the gate capacitances a predetermined voltage, common to all the memory cells.