The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Jan. 28, 2002
Applicant:
Inventor:
Masanobu Ikeda, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A method of manufacturing a semiconductor device is provided. The method including the steps of forming an insulating interlayer film on a substrate, forming a Cu interconnection pattern in the insulating interlayer film, forming a first insulating film on the insulating interlayer film at a first temperature lower than 400° C. in a nonoxide situation so that the first insulating film covers the Cu interconnection pattern, and forming a second insulating film on the first insulating film at a second temperature higher than the first temperature.