The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Feb. 28, 2003
Applicant:
Inventor:
Mayumi Morizuka, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1338 ;
U.S. Cl.
CPC ...
H01L 2/1338 ;
Abstract
A method of manufacturing a high electron mobility transistor, comprising laminating an electron accumulation layer and an electron supply layer successively on a substrate; selectively removing the electron supply layer to isolate an element region; forming a source and a drain electrode on the electron supply layer of the isolated element region; and forming a hole absorption electrode on the electron accumulation layer exposed by the selective removal of the electron supply layer, and simultaneously forming a gate electrode on the electron supply layer of the isolated element region.