The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Aug. 20, 2001
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/512 ; C30B 2/514 ;
U.S. Cl.
CPC ...
C30B 2/512 ; C30B 2/514 ;
Abstract
An &agr;-SiC bulk single crystal is formed from an SiC gas phase by deposition of SiC on an SiC seed crystal. To enable an SiC bulk single crystal of the 15R type to be grown reproducibly and without restricting the seed crystal, the deposition takes place under a uniaxial tensile strength which includes a predetermined angle with the [0001] axis of the bulk single crystal, so that a rhombohedral crystal is formed.