The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2004
Filed:
Nov. 02, 2001
Santosh Kumar, San Jose, CA (US);
Edmund L. Russell, Danville, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A method and computer aided system for predicting the reliability of oxide-nitride-oxide (ONO) based non-volatile memory. ONO memory devices may be programmed. Margin voltages may be recorded initially, and during baking at 100 degrees C. and 300 degrees C. From this data, constants and activation energy may be determined through a first formula. Frenkel-Poole activation energy may be determined. Through the use of a second formula, decay time of the information stored in the ONO memory may be predicted from the activation energy. The first formula may also be used to predict the decay time. The two decay time predictions may be compared to establish confidence. In this manner, data retention of an ONO memory may be reliably predicted.