The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2004
Filed:
Feb. 16, 1999
NGK Insulators, Ltd., Nagoya City, JP;
Abstract
A method of processing a substrate made of a ferroelectric single crystalline material, including the steps of forming a desired proton-exchanged layer in the substrate by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a concave ditch structure in the ferroelectric single crystalline substrate, wherein the desired proton-exchange layer is formed by using an acid containing a lithium salt as a proton-exchanging source, the surface of the substrate from which the concave ditch structure is formed is an X-cut surface or a Z-cut surface, as a main surface, of the ferroelectric single crystalline material used as the substrate, and the concave ditch structure has a recessed portion with its depth equal to or larger than its half opening width.