The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2004
Filed:
Sep. 09, 2002
Applicant:
Inventor:
Mehmet M. Eker, Santee, CA (US);
Assignee:
Applied Micro Circuits Corporation, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/10 ;
U.S. Cl.
CPC ...
G05F 1/10 ;
Abstract
A CMOS field effect transistor (FET) is provided with predetermined temperature characteristics. More particularly, the relationship between the channel length, gate width, gate-to-source voltage, and drain current is exploited to create an FET that has relatively constant drain current across a relatively wide range of frequencies. Alternately, the above-mentioned relationship is exploited to create a drain current with a predetermined temperature coefficient across a wide temperature range.