The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2004
Filed:
Mar. 15, 2002
Jinn-Kong Sheu, Tainan, TW;
South Epitaxy Corporation, Tainan, TW;
Abstract
A light emitting diode structure is formed on a substrate. A nucleation layer at low temperature is formed on the substrate. A buffer layer is formed on the nucleation layer for easing the subsequent formation of crystal growth. N active layer is disposed between an upper confinement layer and a lower confinement layer. The active layer include the semiconductor material doped with III-N elements. A contact layer is disposed on the upper confinement layer. A reversed tunneling layer is form on the contact layer, wherein the conductive types for both are different. A transparent layer is formed on the reversed tunneling layer. A cathode electrode contacts with the conductive buffer layer and is separated from the active layer and the transparent electrode.