The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6686600 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 03, 2004

Filed:

Dec. 04, 2001
Applicant:
Inventor:

Shoji Sadayama, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 3/720 ;
U.S. Cl.
CPC ...
H01J 3/720 ;
Abstract

The present invention adopts a TEM sample slicing process for observation of a specified point on a cross section of a wafer shaped sample, comprising a step of depositing a thick protection film on the sample surface at regions of the cross section to be observed, a step of hollowing out a large hole in front of the regions of the cross section to be observed, a step of forming hollowing out a hole behind the regions of the cross section to be observed and forming slicing process sections, and following on from that, executing slicing processing by setting irradiation regions at regions including the center of the slicing process section and irradiating a focused ion beam from above the sample surface, using angle of incidence characteristics of etching rate due to a focused ion beam.


Find Patent Forward Citations

Sadayama, Shoji. (2004). Tem sample slicing process (U.S. Patent No. 6686600). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6686600

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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