The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2004
Filed:
Oct. 31, 2002
Applicant:
Inventors:
Bill Alan Wofford, Dallas, TX (US);
Robert Nguyen, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/18242 ;
Abstract
A polysilicon layer ( ) is formed on a dielectric region ( ). An optional metal silicide layer ( ) can be formed on the polysilicon layer. A dielectric layer ( ) is formed over the metal silicide layer and a conductive layer ( ) formed over the dielectric layer. The formed layers are etched by a combination of multi-step dry and wet process to form high precision integrated circuit capacitors.