The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
May. 12, 1999
Koichi Sawahata, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
The results of conventional analytical ion implantation simulation for the point defect distribution, for a silicon substrate on which an oxide layer or a nitride layer is formed, differ from the results of the Monte Carlo ion implantation simulation method. According to the present invention, it is unnecessary to distinguish between layers of materials in which point defects are or are not generated when determining the point defect distribution because, although point defects do not occur in some materials, such as oxides or nitrides, layers of these materials undergo the same amount of damage by ion implantation as layers of a material in which point defects are generated, such as silicon. Therefore, in the present invention, when carrying out simulations under ion implantation conditions in which channeling is inhibited, whether for a substrate having a layer of a material in which point defects usually are not generated, such as an oxide or a nitride, or for a substrate not having a layer of such a material, the point defect distribution simulation (steps and ) uses the same distribution as for a layer of a material in which point defects are generated.