The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Nov. 21, 2001
Hugh C. Hiner, Fremont, CA (US);
Kyusik Sin, Pleasanton, CA (US);
William Jensen, Fremont, CA (US);
Xizeng Shi, Fremont, CA (US);
Western Digital (Fremont), Inc., Fremont, CA (US);
Abstract
A method and structure for providing a tunneling magnetoresistive (TMR) element is disclosed. The method and structure include providing a TMR layer that includes a first magnetic layer, a second magnetic layer and a first insulating layer disposed between the first magnetic layer and the second magnetic layer. The method and structure also include providing a first material and a protective layer. The first material allows electrical contact to be made to the tunneling magnetoresistive layer and is disposed above the tunneling magnetoresistive layer. The first material is capable of being undercut by an plasma etch without exposing a portion of the tunneling magnetoresistive layer under a remaining portion of the first material. The second protective layer covers a portion of the tunneling magnetoresistive sensor and a portion of the first material. In one aspect, the method and structure also include providing a second material disposed between the tunneling magnetoresistive layer and the first material. The second material allows electrical contact to be made to the tunneling magnetoresistive layer and is resistant to removal by the plasma etch.