The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Aug. 31, 2000
Applicant:
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ;
Abstract
A semiconductor device includes a gate electrode on a P type well through a gate oxide film , a heavily-doped N+ type source layer formed to be adjacent to the one end of the gate electrode , an N+ type drain layer formed apart from the other end of the gate electrode , a P type body layer below the gate electrode , and a lightly-doped drain layer formed in an area extending from below the gate electrode to the heavily-doped N+ type drain layer so that it is shallow at least below the gate electrode and deep in the vicinity of the heavily-doped N-type drain layer