The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Feb. 05, 2001
Applicant:
Inventors:
Toshiyuki Shinozaki, Tenri, JP;
Toshiya Tsukao, Yamatokooriyama, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ; H01L 3/1072 ; H01L 3/1109 ; H01L 2/7082 ;
U.S. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ; H01L 3/1072 ; H01L 3/1109 ; H01L 2/7082 ;
Abstract
A Pt alloyed reaction layer is formed under a base ohmic electrode. This alloyed reaction layer extends through a base protective layer so as to reach a base layer. Besides, a Pt alloyed reaction layer is formed under an emitter ohmic electrode. This alloyed reaction layer is formed only within a second emitter contact layer. With this constitution, the manufacturing cost for the HBT can be reduced and successful contact characteristics for the HBT can be obtained.
Shinozaki, Toshiyuki. (2004). Heterojunction bipolar transistor and manufacturing method therefor including electrode alloyed reaction layers (U.S. Patent No. 6683332). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6683332
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile