The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Apr. 25, 2002
Richard Francis, Manhattan Beach, CA (US);
Chiu Ng, El Segundo, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
An IGBT has parallel spaced trenches lined with gate oxide and filled with conductive polysilicon gate bodies. The trenches extend through a P base region which is about 7 microns deep. A deep narrow N emitter diffusion is at the top of the trench and a shallow P contact diffusion extends between adjacent emitter diffusions. The N emitter diffusions are arranged to define a minimum R . The trenches are sufficiently deep to define long channel regions which can withstand a substantial portion of the blocking voltage of the device. A second blanket emitter implant and diffusion defines a shallow high concentration emitter diffusion extension at the top of the die for improved contact to the emitter diffusions.